SFP70N06 SFP70N06 SFP70N06 SFP70N06 1 /7 . cop yright@winsemi semiconductor co.,ltd.,all rights reserved silicon n-channel mosfet features features features features ? low rds(on) (0.014 )@v gs =10v ? low gate charge (typical 70nc) ? low crss (typical 160pf) ? improved dv/dt capability ? 100% avalanche tested ? maximum junction temperature range (175 c) general general general general description description description description this power mosfet is produced using semiwell s advanced planar stripe, dmos technology. this latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics. this power mosfet is well suited for synchronous dc-dc converters and power management in portable and battery operated products. absolute absolute absolute absolute maximum maximum maximum maximum ratings ratings ratings ratings symbol symbol symbol symbol parameter parameter parameter parameter value value value value units units units units v dss drain source voltage 60 v i d continuous drain current(@tc=25 ) 70 a continuous drain current(@tc=100 ) 51 a i dm drain current pulsed (note1) 280 a v gs gate to source voltage 25 v e as single pulsed avalanche energy ( note 2) 800 mj dv/dt peak diode recovery dv/dt (note 3) 7.0 v/ns p d total power dissipation(@tc=2 5 ) 158 w derating factor above 25 1.05 w/ t j, t stg junction and storage temperature -55~1 75 t l maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 300 thermal thermal thermal thermal characteristics characteristics characteristics characteristics symbol symbol symbol symbol parameter parameter parameter parameter value value value value units units units units min min min min typ typ typ typ max max max max r qjc thermal resistance, junction-to-case - - 0.95 /w r qcs thermal resistance, case-to-sink - 0.5 - /w r qja thermal resistance, junction-to-ambient - - 62 .5 /w
SFP70N06 SFP70N06 SFP70N06 SFP70N06 2 /7 . cop yright@winsemi semiconductor co.,ltd.,all rights reserved electrical electrical electrical electrical characteristics characteristics characteristics characteristics (tc (tc (tc (tc = = = = 25 25 25 25 c) c) c) c) characteristics symbol test condition min type max unit gate leakage current i gss v gs = 25 v, v ds = 0 v - - 100 na drain cut ? off current i dss v ds = 60 v, v gs = 0 v - - 1 a drain ? source breakdown voltage v (br)dss i d = 250 a, v gs = 0 v 60 - - v break voltage temperature coefficient bv dss / tj i d =250 a, referenced to 25 - 0.066 - v/ gate threshold voltage v gs(th) v ds = v gs , i d =250 a 2.0 - 4 .0 v drain ? source on resistance r ds(on) v gs = 10 v, i d = 35 a - - 0.014 input capacitance c iss v ds = 25 v, v gs = 0 v , f = 1 mhz - 2350 3050 pf reverse transfer capacitance c rss - 160 200 output capacitance c oss - 690 890 switching time rise time tr v dd = 30 v, i d = 35 a r g = 50 (note4,5) - 60 130 ns turn ? on time ton - 30 70 fall time tf - 95 200 turn ? off time toff - 125 260 total gate charge (gate ? source plus gate ? drain) qg v d s = 48 v, v gs = 10 v, i d = 70 a (note4,5) - 70 90 nc gate ? source charge qgs - 18 - gate ? drain ( miller ) charge qgd - 24 - source source source source ? ? ? ? drain drain drain drain ratings ratings ratings ratings and and and and characteristics characteristics characteristics characteristics (ta (ta (ta (ta = = = = 25 25 25 25 c) c) c) c) characteristics symbol test condition min type max unit continuous source current i s integral reverse p-n junction diode in the mosfet - - 70 a pulsed source current i sm - - 280 diode forward voltage v sd i s =70a, v gs =0v - - 1.5 v reverse recovery time t rr i s =70a,v gs =0v,di f /dt=100a/us - 62 - ns reverse recovery charge q rr - 110 - c notes 1. repeativity rating : pulse width limited by junction temperature 2. l = 250 uh, i as = 70a, v dd = 25v, r g = 0 , starting t j = 25 c 3. isd 70a, di/dt 300a/us, v dd bv dss , starting t j = 25 c 4. pulse test : pulse width 300us, duty cycle 2% 5. essentially independent of operating temperature.
SFP70N06 SFP70N06 SFP70N06 SFP70N06 3 /7 . cop yright@winsemi semiconductor co.,ltd.,all rights reserved fig fig fig fig 1. 1. 1. 1. on-state on-state on-state on-state characteristics characteristics characteristics characteristics fig fig fig fig 2. 2. 2. 2. transfer transfer transfer transfer characteristics characteristics characteristics characteristics fig fig fig fig 3. 3. 3. 3. on on on on resistance resistance resistance resistance variation variation variation variation vs. vs. vs. vs. fig fig fig fig 4. 4. 4. 4. on on on on state state state state current current current current vs. vs. vs. vs. drain drain drain drain current current current current and and and and gate gate gate gate voltage voltage voltage voltage allowable allowable allowable allowable case case case case temperature temperature temperature temperature fig fig fig fig 5. 5. 5. 5. capacitance capacitance capacitance capacitance characteristics characteristics characteristics characteristics fig fig fig fig 6. 6. 6. 6. gate gate gate gate charge charge charge charge characteristics characteristics characteristics characteristics
SFP70N06 SFP70N06 SFP70N06 SFP70N06 4 /7 . cop yright@winsemi semiconductor co.,ltd.,all rights reserved fig fig fig fig 7. 7. 7. 7. breakdown breakdown breakdown breakdown voltage voltage voltage voltage variation variation variation variation fig fig fig fig 8. 8. 8. 8. on-resistance on-resistance on-resistance on-resistance variation variation variation variation vs. vs. vs. vs. junction junction junction junction temperature temperature temperature temperature vs. vs. vs. vs. junction junction junction junction temperature temperature temperature temperature fig fig fig fig 9. 9. 9. 9. maximum maximum maximum maximum safe safe safe safe operating operating operating operating area area area area fig fig fig fig 10. 10. 10. 10. maximum maximum maximum maximum drain drain drain drain current current current current vs. vs. vs. vs. case case case case temperature temperature temperature temperature fig fig fig fig 11. 11. 11. 11. transient transient transient transient thermal thermal thermal thermal response response response response curve curve curve curve
SFP70N06 SFP70N06 SFP70N06 SFP70N06 5 /7 . cop yright@winsemi semiconductor co.,ltd.,all rights reserved fig.1 fig.1 fig.1 fig.1 2 2 2 2 gate gate gate gate test test test test circuit circuit circuit circuit & & & & waveform waveform waveform waveform fig.1 fig.1 fig.1 fig.1 3 3 3 3 resistive resistive resistive resistive switching switching switching switching test test test test circuit circuit circuit circuit & & & & waveform waveform waveform waveform fig.1 fig.1 fig.1 fig.1 4 4 4 4 unclamped unclamped unclamped unclamped inductive inductive inductive inductive switching switching switching switching test test test test circuit circuit circuit circuit & & & & waveform waveform waveform waveform
SFP70N06 SFP70N06 SFP70N06 SFP70N06 6 /7 . cop yright@winsemi semiconductor co.,ltd.,all rights reserved fig.13 fig.13 fig.13 fig.13 peak peak peak peak diode diode diode diode recovery recovery recovery recovery dv/dt dv/dt dv/dt dv/dt test test test test circuit circuit circuit circuit & & & & waveform waveform waveform waveform
SFP70N06 SFP70N06 SFP70N06 SFP70N06 7 /7 . cop yright@winsemi semiconductor co.,ltd.,all rights reserved to-220 to-220 to-220 to-220 package package package package dimension dimension dimension dimension
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